Power Electronics

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3 ARTICLES

last wk.

Kyoto University Demonstrates SiC Transistor That Runs at 600°C

A bottom-gate, double-well design built with industry-standard ion implantation cuts leakage to near material limits and points to a fab-compatible path for extreme‑temperature electronics.

3 ARTICLES

2mo ago

GE Aerospace and Wolfspeed Sign MOU to Develop 10 kV Silicon Carbide Power Modules

3 ARTICLES

5mo ago

Cyient Semiconductors Takes Majority Stake in Kinetic Technologies for $85 Million

3 ARTICLES

7mo ago

BHEL Begins Deliveries of Underslung Traction Converters for Vande Bharat Sleeper Trains

3 ARTICLES

10mo ago

Peer-Reviewed Flight Proves Silicon Carbide Drive Can Replace Silicon in Hybrid Aircraft

8 ARTICLES

10mo ago

IIT Delhi Launches One-Year Online PG Diploma in Electric Vehicle Technology

Power Electronics

Kyoto University Demonstrates SiC Transistor That Runs at 600°C

GE Aerospace and Wolfspeed Sign MOU to Develop 10 kV Silicon Carbide Power Modules

Cyient Semiconductors Takes Majority Stake in Kinetic Technologies for $85 Million

BHEL Begins Deliveries of Underslung Traction Converters for Vande Bharat Sleeper Trains

Peer-Reviewed Flight Proves Silicon Carbide Drive Can Replace Silicon in Hybrid Aircraft

Anker’s Halloween Sale Drops Prime Chargers to 2025 Lows on Amazon

Power Integrations Joins Nvidia’s 800-Volt Data-Center Power Overhaul

Stellantis Begins Road Tests of Integrated Battery That Boosts EV Efficiency

IIT Delhi Launches One-Year Online PG Diploma in Electric Vehicle Technology