GE Aerospace and Wolfspeed Sign MOU to Develop 10 kV Silicon Carbide Power Modules

Overview

• The companies signed a Memorandum of Understanding on Monday to jointly develop standards and prototypes for high‑voltage silicon carbide (SiC) power modules.
• The MOU explicitly covers the use and supply of Wolfspeed’s commercially available 10 kV SiC MOSFET die as a core building block for the planned modules.
• GE Aerospace will contribute system integration work and recent production-ready progress, including qualified high‑voltage power units for U.S. military ground vehicles and fourth‑generation SiC MOSFET demonstrations at Niskayuna.
• Wolfspeed brings high-volume 200 mm SiC wafer manufacturing to backscale production and help reduce dependence on overseas suppliers.
• If translated into certified modules, higher‑voltage SiC parts could cut the number of series devices in power systems, making equipment smaller, more efficient, and quicker to deploy for AI, electrification, and defense uses, but the MOU is nonbinding and formal timelines, standards and supply agreements remain to be set.