Technology ❯ Engineering ❯ Electrical Engineering

Semiconductors

Infrared Detectors Chip Design Silicon Carbide Devices Current-Voltage Characteristics Radiation-Hard Circuits Power Supply Systems Silicon Carbide

3 ARTICLES

last wk.

TSMC and Taiwan Researchers Build MoS2 Transistor With 0.42 nm Engineered Interface

Engineering a 0.42 nm aluminum‑oxide buffer on monolayer MoS2 produces about 1 nm equivalent oxide thickness, showing strong lab transistor metrics with wafer‑scale manufacturability still unproven.

4 ARTICLES

last yr.

JR East Traces E8 Series Power Failures to Semiconductor Glitch, to Resume August 1