U.S. Army Selects Navitas for 10 kV Silicon Carbide Prototype Program

Overview

• The Army chose Navitas for the ALATTIS prototype project to design, fabricate and validate 10 kilovolt silicon carbide insulated‑gate bipolar transistors and related PiN diodes for mission‑critical systems.
• Hours after Monday's announcement, Navitas shares rose about 20% in after‑hours trading and gained roughly another 12% in premarket trade, lifting the stock toward $13 but remaining well below its May peak above $30.
• The Army Research Laboratory, under the U.S. Army Combat Capabilities Development Command and backed by the Joint Experimentation and Technology Accelerator, is sponsoring ALATTIS to build a domestic manufacturing process for ultra‑high‑voltage SiC devices.
• Navitas won the award over other U.S. SiC firms after the Army cited the company’s high‑voltage technology and U.S. production base; Navitas has not disclosed any financial terms and the work is at a prototype and process‑validation stage.
• Silicon carbide enables higher voltages and greater efficiency than conventional silicon in power electronics, so success in ALATTIS could expand Navitas’s addressable markets for defense, grid and industrial systems while strengthening a U.S. supply chain for critical power semiconductors.