Overview

• The team used atomic-layer deposition to coat the transistor channel with gallium-doped indium oxide one layer at a time before crystallizing it.
• A gate-all-around configuration fully encircles the channel to improve switching efficiency and scalability compared with conventional gates.
• Device testing recorded an electron mobility of 44.5 cm²/Vs, outperforming similar oxide-based transistors reported to date.
• The transistor operated reliably under continuous stress for nearly three hours thanks to gallium suppressing oxygen vacancies in the oxide film.
• By moving beyond silicon, the new technology tackles scaling limits and could advance high-density components for AI and big data applications.