Overview
- Saimemory and Intel announced a formal collaboration to develop Z-Angle Memory (ZAM), a vertically stacked DRAM architecture for AI and high‑performance computing.
- The companies set a roadmap targeting prototypes by the fiscal year ending March 31, 2028 with commercialization planned for fiscal 2029.
- Intel’s Next Generation DRAM Bonding work, developed under U.S. Department of Energy programs and tested at Sandia, underpins the new architecture and assembly approach.
- Reports describe goals of two to three times the capacity of current HBM with substantially lower power use, positioning ZAM as a prospective alternative to incumbent HBM solutions.
- Japanese partners including Fujitsu, the University of Tokyo, and Riken are reported to be involved, and investors pushed SoftBank shares up about 3% and Intel roughly 5% after the announcement.