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SK hynix Unveils UFS 4.1 Storage Chip Featuring Industry-Leading 321-Layer NAND

The new chip delivers record speeds, improved power efficiency, and a slimmer design, with plans for mass production in early 2026.

SK hynix showcased its current UFS 4.1 solution, utilizing 238-layer 4D NAND flash, at Computex this week.
Next gen UFS 4.1 flash
This photo, provided by SK hynix Inc., shows its new UFS 4.1 chip for mobile applications. (PHOTO NOT FOR SALE) (Yonhap)

Overview

  • SK hynix has introduced its UFS 4.1 storage solution, built on the world’s first 321-layer 1 terabit NAND flash technology.
  • The chip offers a 7% improvement in power efficiency and a reduced thickness of 0.85 mm, tailored for ultra-slim smartphones and AI-powered devices.
  • It achieves the fastest sequential read speeds for fourth-generation UFS at 4,300 MB/s, alongside 15% and 40% improvements in random read and write speeds, respectively.
  • Sample shipments are planned for late 2025, with mass production expected to begin in the first quarter of 2026 in 512GB and 1TB capacities.
  • SK hynix is also advancing the development of SSDs based on the same 321-layer NAND for both consumer and data center applications, targeting completion by the end of 2025.