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SK hynix Installs ASML High-NA EUV at M16 for Next-Gen Memory Production

The EXE:5200B promises finer patterning that SK hynix says will quicken DRAM advances for AI applications.

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This undated file photo shows SK hynix Inc.'s headquarters in Icheon, south of Seoul. (Yonhap)

Overview

  • SK hynix said it installed ASML’s High-NA EUV scanner at its M16 fab in Icheon on Sept. 3, claiming to be the first memory maker to adopt the tool for mass-production development.
  • The TWINSCAN EXE:5200B raises optical resolution by about 40%, enabling 1.7 times smaller features and up to 2.9 times higher circuit density versus current EUV systems, according to company figures.
  • The company says the system will speed development of next-generation memory, including HBM and 3D DRAM, to strengthen its position in AI-focused products.
  • Delivery was advanced by roughly six months from an original 2026 timeline, with industry estimates putting the unit price near 600 billion won (about $432 million).
  • Intel, imec, TSMC and Samsung obtained High-NA tools earlier for R&D or broader use, while SK hynix brought a mass-production model into a memory fab.