Overview

• SK hynix claims the device is the first QLC NAND to surpass 300 layers, setting a new density mark at 321 layers with a 2Tb die.
• The company says the chip doubles data transfer speed versus prior QLC, with write performance up about 56%, read performance up about 18%, and write power efficiency up more than 23%.
• To curb performance loss at higher capacities, the design increases internal parallelism by moving from four to six planes to boost simultaneous read operations.
• Proprietary packaging is slated to stack 32 NAND dies in one package, which SK hynix says will double integration density for ultra‑high‑capacity enterprise SSDs aimed at AI servers.
• SK hynix plans broader deployment after global customer validation, targeting AI data centers, with initial use in PC SSDs before expansion to enterprise SSDs and smartphones.