Samsung Unveils Industry-Leading 36GB HBM3e Memory, Setting New Standards for AI Applications

Samsung's latest 36GB HBM3e memory stack surpasses competitors with higher capacity and performance, promising significant advancements in AI technology.

Samsung announces the development of a 36GB HBM3e memory stack, the highest capacity in the industry, designed to meet the growing demands of AI applications.
The new memory solution features a 12-Hi stack configuration, offering unprecedented bandwidth of up to 1.28TB/sec, enhancing AI training and inference services.
Samsung's advanced thermal compression non-conductive film technology enables the industry's smallest gap between memory devices, improving vertical density and reducing chip die warping.
Micron also enters the HBM3e market with its 24GB 8-Hi memory, set to power NVIDIA's H200 AI GPUs, highlighting the competitive landscape in high-bandwidth memory.
Samsung and Micron's advancements in HBM3e memory are expected to drive significant improvements in AI performance, reducing total cost of ownership for datacenters.