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Samsung Unveils Industry-Leading 36GB HBM3e Memory, Setting New Standards for AI Applications

Samsung's latest 36GB HBM3e memory stack surpasses competitors with higher capacity and performance, promising significant advancements in AI technology.

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Micron begins volume production of its new HBM3E memory solution, and will ship as part of NVIDIA's beefed-up H200 AI GPU coming soon.
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Overview

  • Samsung announces the development of a 36GB HBM3e memory stack, the highest capacity in the industry, designed to meet the growing demands of AI applications.
  • The new memory solution features a 12-Hi stack configuration, offering unprecedented bandwidth of up to 1.28TB/sec, enhancing AI training and inference services.
  • Samsung's advanced thermal compression non-conductive film technology enables the industry's smallest gap between memory devices, improving vertical density and reducing chip die warping.
  • Micron also enters the HBM3e market with its 24GB 8-Hi memory, set to power NVIDIA's H200 AI GPUs, highlighting the competitive landscape in high-bandwidth memory.
  • Samsung and Micron's advancements in HBM3e memory are expected to drive significant improvements in AI performance, reducing total cost of ownership for datacenters.