Overview
- Samsung began shipping 12‑layer HBM4E samples to global customers on May 29, 2026, and described the deliveries as the world’s first for this next‑generation AI memory product.
- The HBM4E sample is a 48GB, 12‑layer stack that Samsung says supports per‑pin speeds of 14–16 Gbps, delivers up to 3.6 TB/s bandwidth per stack, and runs more than 20% faster than HBM4.
- Samsung says the chip pairs its 1c sixth‑generation 10nm‑class DRAM with a 4nm logic base die and that design and packaging changes improve energy efficiency by about 16% and thermal resistance by over 14%.
- The company will move to mass production in line with customer qualification schedules after samples are tested, and it shipped the samples earlier than its prior mid‑year forecast.
- Markets pushed Samsung shares up roughly 6% on the news and the shipment tightens competition with SK Hynix and Micron for AI server contracts while supporting Samsung’s plans to expand Pyeongtaek capacity and heavy HBM capex.