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Samsung Reportedly Plans Second Texas Fab to Make HBM Base Dies for AMD and Nvidia

If built, the plant would add U.S. capacity for the logic layer that links stacked memory to AI chips.

Overview

  • Research reports say Samsung intends to build a second Taylor, Texas, fab to make high-bandwidth memory (HBM) base dies exclusively for AMD and Nvidia, but the details have limited independent confirmation.
  • The base die is the logic layer at the bottom of an HBM stack that manages data flow between the memory and AI processors, making it a strategic component for high-performance AI systems.
  • The plan calls for a large facility and aims to pair U.S.-made base dies with DRAM core dies produced in South Korea to assemble finished HBM stacks in a hybrid supply chain.
  • Reports indicate the site would target more advanced process nodes than current HBM base dies, a move that could raise Samsung’s foundry profile versus TSMC if the company executes successfully.
  • The announcement follows Samsung’s broader Texas expansion tied to customer-funded deals such as the first Taylor fab and comes as market research shows tight HBM supply and elevated prices, creating execution and timing risks for the multi-year buildout.