Researchers Develop Energy-Efficient MRAM Technology Using Electric Fields

A breakthrough in magnetoelectric MRAM promises reduced power consumption and improved stability for next-generation memory devices.

Scientists at Osaka University have advanced Magnetoresistive Random-Access Memory (MRAM) technology by enabling data writing through electric fields instead of electric currents.
The new approach significantly reduces energy consumption during data writing by avoiding Joule heating, a limitation of current-based MRAM systems.
The innovation relies on a multiferroic heterostructure enhanced by an ultra-thin vanadium layer, which improves magnetic stability and enables precise control of magnetic states.
The research demonstrated a giant magnetoelectric effect and the ability to achieve non-volatile binary states at zero electric field, meeting key requirements for practical MRAM applications.
While promising, the technology requires further development to scale down for commercial use, but it represents a step toward more efficient and sustainable computing memory solutions.