Overview

• IMDEA Nanoscience’s spiro‑phenothiazine PTZ‑Fl hole‑transport material delivered 25.8% device efficiency (25.2% NRL certified) and a 25 cm² module at 22.1%.
• The PTZ‑Fl devices retained about 80% output after over 1,000 hours under standard operation and 95% after 3,600 hours under ISOS‑D‑1 conditions.
• A Materials Futures study from imec, Hasselt University, and Ghent University found charge‑transport layers fail first under dark thermal stress, whereas illumination drives absorber degradation through halide phase segregation.
• Researchers call for stabilization across materials, devices, and modules plus broader outdoor testing, nanoscale failure analysis, and industrial stability standards before scale‑up.
• A new arXiv review highlights thermal instability in MAPbI3 and doped spiro‑OMeTAD HTLs and points to dopant‑free or inorganic HTMs such as P3HT, CuSCN, NiOx, and Cu2O as more stable options.