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Navitas Touts GaN/SiC Power Chips for Nvidia’s 800V AI Data-Center Plan as Shares Rocket

Analysts warn meaningful sales hinge on design wins over several years.

Overview

  • Navitas on Oct. 13 unveiled 100 V GaN FETs, 650 V GaN devices, and high‑voltage SiC parts positioned for Nvidia’s planned 800‑volt direct‑current data‑center architecture.
  • The company claims the new wide‑bandgap devices boost efficiency, power density, and thermal performance for high‑power AI infrastructure.
  • Reporting indicates Nvidia intends to begin shifting data centers to 800 VDC in 2027 to support rising AI power demands.
  • Navitas shares surged about 710% from late April through Oct. 16, with investors betting on potential demand tied to the 800 VDC transition.
  • Despite the rally, recent results show limited scale: first‑half 2025 revenue was $28.5 million with a $65.9 million loss and $161 million in cash, and Wall Street expects continued near‑term losses.