Overview

• Navitas reported progress on medium- and high-voltage GaN and SiC devices intended to enable Nvidia’s newly promoted 800 VDC data-center power architecture.
• The company introduced 100 V GaN FETs for GPU power boards plus a 650 V GaN lineup and high-voltage SiC MOSFETs, with datasheets and evaluation boards offered to qualified customers.
• A new fabrication partnership with Power Chip will produce the 100 V GaN FETs on a 200 mm GaN-on-silicon process aimed at scalable, high-volume manufacturing.
• Navitas highlighted the 800 VDC approach of converting 13.8 kVAC at the perimeter to 800 VDC, then stepping down via efficient DC-DC stages to GPU voltages, citing efficiency gains, MW-scale rack power, and IEC LVDC alignment.
• Navitas shares rose about 21% in after-hours trading Monday following the update, though the high-voltage device ecosystem and large-scale deployments remain in development.