Overview
- Nikkei Asia reports Micron plans a new EUV-enabled DRAM and high-bandwidth memory facility at its Hiroshima site with about ¥1.5 trillion in investment.
- Government support is reported at roughly ¥500–536 billion, though neither Micron nor Japan’s METI has confirmed the plan.
- Timelines in the coverage diverge, with one account pointing to construction starting in May 2026 for 2028 shipments and another suggesting 2027 mass output.
- The factory would focus on HBM for AI accelerators as supply remains tight and industry trackers show Micron approaching roughly 20% of HBM shipments.
- Micron shares rose about 2.7% after the subsidy reports, signaling investor optimism about expanded capacity.