Overview
- Samsung presented a three-pronged AI memory plan at the OCP Global Summit on Monday, focusing on high-bandwidth memory (HBM), Compute Express Link (CXL) memory pooling and next-generation SSD storage to ease inference bottlenecks.
- SK hynix told attendees at SEDEX on Wednesday that AI infrastructure needs could grow roughly 20-fold by 2030 and said it is developing 3D stacked DRAM and high-bandwidth flash as lower-cost, higher-capacity alternatives to HBM.
- Major suppliers have locked large shares of near-term output into multi‑year long-term agreements that preserve revenue but keep DRAM, HBM and NAND prices elevated, with analysts forecasting HBM tightness through 2028.
- Tesla and xAI CEO Elon Musk publicly praised Micron’s ‘reasonable’ pricing on X and called competitors’ prices ‘extortionate,’ underscoring buyer pushback over high memory costs.
- China’s CXMT has grown to about 10% of DRAM revenue and plans rapid capacity increases toward 2028, a development that could shift market share and create oversupply risk later in the decade if many new fabs ramp at once.