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Intel Moves 18A‑P Process Into Risk Production

The revision adds a dual‑contact Power Boost transistor plus thermal and via improvements, which could make Intel more appealing to foundry clients if yields and qualification validate its claims.

Overview

  • Intel announced at the VLSI Symposium that 18A‑P entered risk production on Tuesday to run limited, low‑volume wafers and gather defect, variability and performance data before any high‑volume ramp.
  • Company data shows 18A‑P delivers about 9% higher performance at the same power or about 18% lower power at the same performance versus Intel 18A, using tests on a standard CPU subblock.
  • A new dual‑contact 'Power Boost' transistor option lowers parasitic resistance to raise drive current and frequency, while Intel also reported 20–40% better thermal resistance and 10–30% lower via resistance from materials and design changes.
  • Intel says 18A‑P is fully design‑rule compatible with 18A so existing IP and design flows can port without a full redesign, which could lower the barrier for foundry customers to trial the node.
  • Market and analyst reaction was positive but cautious: shares rose after the announcement, yet winning major external customers and moving to volume depends on yields, qualification timing and successful customer tape‑outs.