Imec and ASML Achieve Breakthrough in High NA EUV Lithography

New technology enables single-pass patterning for smaller, more efficient chips, marking a significant advancement in semiconductor manufacturing.

High NA EUV lithography demonstrated to create 9.5nm dense metal lines and 19nm pitch in a single exposure.
Technology expected to reduce manufacturing costs and complexity by eliminating multiple mask layers.
Imec successfully patterned both logic and DRAM structures, showcasing the versatility of the new tool.
Intel, TSMC, and Samsung among early adopters of ASML's High NA EUV machines.
The advancements pave the way for the next generation of smaller, faster, and more energy-efficient chips.