Overview
- A peer-reviewed study published October 30 in Nature Nanotechnology reports zero-resistance transport in gallium‑hyperdoped germanium films.
- The material becomes superconducting at roughly 3.5 kelvin, fitting cryogenic quantum computing and low‑temperature electronics rather than consumer devices.
- The method forces gallium atoms into substitutional lattice sites, overcoming prior instability from heavy doping while maintaining crystalline order.
- The team demonstrates a wafer-scale material stack capable of fabricating millions of crystalline Josephson‑junction pixels.
- The work involves researchers from New York University, the University of Queensland, ETH Zurich, and Ohio State University, with partial funding from the US Air Force Office of Scientific Research.