Overview
- An international team reports in Nature Nanotechnology that heavy gallium doping of epitaxial germanium produces zero‑resistance superconductivity.
- Molecular beam epitaxy with advanced X‑ray techniques forces gallium atoms to substitute into the germanium lattice at high concentrations.
- The films exhibit superconductivity at about 3.5 kelvin, confirming stable, substitutional Ga‑hyperdoped germanium.
- The method yields uniform crystalline boundaries between superconducting and semiconducting layers, enabling stacked structures and wafer‑scale Josephson junction arrays.
- Researchers highlight promise for quantum circuits, sensors and low‑power cryogenic electronics, while experts note the required ultra‑cold operation limits consumer uses for now but aligns with quantum computing environments.