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CXMT Says It Will Ship 4F² DDR5 Server Modules by Year‑End 2026

The company claims a 30–50% cell‑density gain from a Vertical Surrounded Gate design that could pressure global DRAM leaders while manufacturing and qualification challenges remain.

Overview

  • CXMT’s president announced the company plans to ship DDR5 RDIMM server modules built on its 4F² architecture before the end of 2026 and framed this as a company target rather than a market‑wide confirmation.
  • The 4F² approach rearranges transistors into a more vertical layout and uses an in‑house Vertical Surrounded Gate transistor plus high‑k metal gate materials to cut each cell’s footprint and reduce leakage.
  • CXMT says the change could raise DRAM cell density by roughly 30 to 50 percent compared with common 6F² designs, which could translate into higher‑capacity server chips if yields and validation succeed.
  • The company is targeting a rapid capacity ramp to 300,000 wafers per month across three 300mm fabs with room to expand toward 600,000 wafers per month from two additional sites in China.
  • Market impact depends on manufacturing yields, long server reliability qualification cycles, customer acceptance, patent positioning and limits on advanced tools imposed by export controls.