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5mo ago

Chinese Researchers Develop World’s Fastest Non-Volatile Flash Memory

Fudan University's graphene-based PoX device achieves unprecedented 400-picosecond write speeds, but remains in kilobyte-scale prototype phase as scaling efforts continue.

A Fudan University team has pushed non‑volatile flash into the picosecond realm, programming a single bit in 400 ps — about 25 billion operations per second — and setting the fastest semiconductor storage record ever published.
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Overview

  • Fudan University's PoX memory device programs bits in 400 picoseconds, setting a new record for non-volatile flash memory speeds.
  • The innovation combines the speed of volatile memory with the persistence of flash, addressing storage bottlenecks in AI hardware.
  • The device utilizes graphene-based ballistic charge transport to bypass traditional speed limitations of flash memory technologies.
  • Current PoX prototypes are limited to kilobyte-scale storage, with researchers focusing on scaling the architecture for larger arrays.
  • Chinese foundries are exploring integration of PoX with commercial chip production, aligning with China's strategic push for semiconductor leadership.